Here is the reorganized content:

JT but enough theory for now let's rather create a simple light bulb switch circuit with with the igbt in such a standard circuit the emitter connects directly to ground while the load connects between the supply voltage and The Collector by then applying a voltage higher than the gate Fresh Out voltage to the gates the igbt turns on and by using higher gate voltages up to 15 volts The Collector emit voltage will always be lower at a given current flow which means less power losses. Just make sure not to exceed the maximum gate Aid of voltage.

Now after removing the voltage source from the gate the igbt Apparently stays conductive. The reason for that is its gate which basically behaves like a mosfet gate and thus can be modeled as a capacitor while we successfully charge it up through the gate voltage and thus turned the igbt on. The charge will afterwards just sit there and let the igbt stay conductive unless of course we connected to ground so that the capacitor can discharge and the igbt can turn off.

To keep this process simple we can use a 10 kilohm pull down resistor between the gate and emitter to discharge the gate automatically and thus save us a bit of trouble. But if you're working with for example a pwm signal above 20 khz using a dedicated driver I Seer like the tcer 4420 is recommended and yes even though it states mfet driver it can also be used for igbts since they are so similar when it comes to the input site.

Now all the IC basically does is connecting the gate either to the supply voltage or ground to charge it up or discharge it. This is important since we need a specific gate charge to turn the igbt on and thus we must consider that the charge Q equals current I multiplied by the time t with higher frequencies T becomes smaller but Q is still constant which means we have to increase the gate current and the driver here with its 6 amp current capability can usually handle the shop.

But not only that driver IC's like the IR 2113 can also be used for bootstrap operation and thus can provide the mandatory higher gate voltage for high speed switching igbts. Which not only require the gate threshold voltage to turn on but additionally the load voltage and speaking of turn on/ turn off times if we compare the delay and Rise time SL full times of the igbt which is around 145 NS and 240 NS with the times of a generic M fats which is around 32 NS and 160 NS.

We can see that the M fets switches faster this fact is also confirmed by these data times in the data sheet of the transistors. In conclusion that means that igbts are utilized for applications beneath 200 khz and M fats for everything above. Now let's get back to the light bulb example and see how much power loss each transistor creates.

The mass fets with its RDS On voltage drop of 0.024 volts at a current flow of 1.7 amps only creates a power loss of 0.04 Watts while the igbt with its collector to emitter voltage drop of 0.79 volts at a current flow of 1.65 amps creates a power loss of 1.3 watts that is 32 times as much and the reason for that is that the MOs Fat's voltage drop rises linear with the current flow which makes it behave like a constant resistance in its ohmic region.

The igbt however acts more like a BJT on the output and features a much higher voltage drop and thus resistance at a lower current flow but on the other hand the common igbt can handle more current than a mass fets and also reaches a current level in which it is more efficient. Combine that with the higher collector to emitter breakdown voltage in comparison to the mass fed Strain To Source breakdown voltage and you know that igbts are all in all practical to use as a medium fast high voltage High current switch so using them for solid state Tesla coil would definitely be possible.

And if you want to know more about the individual components of the igbt aka the BJT and the MOs fat then don't forget to have a look at the dedicated Basics videos. As always don't forget to like share and subscribe stay creative and I will see you next time

WEBVTTKind: captionsLanguage: ensince I'm currently trying to power my solid state Tesla coil properly th inverter circuits I did some online research naturally you either want to use a half Bridge or full Bridge topology to let current flow through the primary coil in alternating directions for testing purposes I've been using and channel Mass fats in a bootstrap full Bridge configuration and apparently this circuit concept is approved by various Tesla Cur schematics I found on the internet but a decent chunk of online schematics also showcase another kind of switch known as an igbt AK insulated Gates bipolar transistor now the question is what's the difference and when should I use a m fets and when an igbt let's find out first off the basics just like with mosfets there exist an nend Channel type and a p Channel type igbt but since P Channel ones usually feature inferior characteristics they are rarely used as a practical example I will utilize the rgp 50 b60 pd1 and channel igbt whose spinouts can be found in the data sheet the G b stands for Gates C for collector and E for emitter and it is not a coincidence that labels were stolen from the M fet with its gate pin and the BJT with its collector and a mid pin because if we take a look at the simplified equivalent Circuit of an igbt we can see that it basically consists of an N Channel M fats and a P&P BJT but enough theory for now let's rather create a simple light bulb switch circuit with with the igbt in such a standard circuit the emitter connects directly to ground while the load connects between the supply voltage and The Collector by then applying a voltage higher than the gate Fresh Out voltage to the gates the igbt turns on and by using higher gate voltages up to 15 volts The Collector emit voltage will always be lower at a given current flow which means less power losses just make sure not to exceed the maximum gate Aid of voltage now after removing the voltage source from the gate the igbt Apparently stays conductive the reason for that is its gate which basically behaves like a mosfet gate and thus can be modeled as a capacitor while we successfully charge it up through the gate voltage and thus turned the igbt on the charge will afterwards just sit there and let the LGBT stay conductive unless of course course we connected to ground so that the capacitor can discharge and the igbt can turn off to keep this process simple we can use a 10 kilohm pull down resistor between the gate and emitter to discharge the gate automatically and thus save us a bit of trouble but if you're working with for example a pwm signal above 20 khz using a dedicated driver I Seer like the tcer 4420 is recommended and yes even though it states mfet driver it can also be used for igbts since they are so similar when it comes to the input site now all the IC basically does is connecting the gate either to the supply voltage or ground to charge it up or discharge it this is important since we need a specific gate charge to turn the igbt on and thus we must consider that the charge Q equals current I multiplied by the time t with higher frequencies T becomes smaller but Q is still constant which means we have to increase the gate current and the driver I here with its 6 amp current capability can usually handle the shop but not only that driver ic's like the IR 2113 can also be used for bootstrap operation and thus can provide the mandatory higher gate voltage for highight switching igbts which not only require the gate threshold voltage to turn on but Additionally the load voltage and speaking of turn on/ turnoff times if we compare the delay and Rise SL full times of the igbt which is around 145 NS and 240 NS with the times of a generic M fats which is around 32 NS and 160 NS we can see that the M fets switches faster this fact is also confirmed by these data times in the data sheet of the transistors and in conclusion that means that igbts are utilized for applications beneath 200 khz and M fats for everything above now let's get back to the light bulb example and see how much power loss each transistor creates the mass fats with its Rain To Source voltage drop of 0.024 volts at a current flow of 1.7 amps only creates a power loss of 0.04 Watts while the agbt with its collector to a middle voltage drop of 0.79 volts at a current flow of 1.65 amps creates a power loss of 1.3 wats that is 32 times as much and the reason for that is that the MOs Fat's voltage drop Rises linear with the current flow which makes it behave like a constant resistance in its omic region the igb T however acts more like a BJT on the output and features a much higher voltage drop and thus resistance at a lower current flow but on the other hand the common igbt can handle more current than a mass fats and also reaches a current level in which it is more efficient combine that with the higher collector to emit a breakdown voltage in comparison to the mass fed Strain To Source breakdown voltage and you know that igbts are all in all practical to use is a medium fast high voltage High current switch so using them for solid state Tesla coil would definitely be possible and if you want to know more about the individual components of the igbt aka the BJT and the MOs fat then don't forget to have a look at the dedicated Basics videos as always don't forget to like share and subscribe stay creative and I will see you next timesince I'm currently trying to power my solid state Tesla coil properly th inverter circuits I did some online research naturally you either want to use a half Bridge or full Bridge topology to let current flow through the primary coil in alternating directions for testing purposes I've been using and channel Mass fats in a bootstrap full Bridge configuration and apparently this circuit concept is approved by various Tesla Cur schematics I found on the internet but a decent chunk of online schematics also showcase another kind of switch known as an igbt AK insulated Gates bipolar transistor now the question is what's the difference and when should I use a m fets and when an igbt let's find out first off the basics just like with mosfets there exist an nend Channel type and a p Channel type igbt but since P Channel ones usually feature inferior characteristics they are rarely used as a practical example I will utilize the rgp 50 b60 pd1 and channel igbt whose spinouts can be found in the data sheet the G b stands for Gates C for collector and E for emitter and it is not a coincidence that labels were stolen from the M fet with its gate pin and the BJT with its collector and a mid pin because if we take a look at the simplified equivalent Circuit of an igbt we can see that it basically consists of an N Channel M fats and a P&P BJT but enough theory for now let's rather create a simple light bulb switch circuit with with the igbt in such a standard circuit the emitter connects directly to ground while the load connects between the supply voltage and The Collector by then applying a voltage higher than the gate Fresh Out voltage to the gates the igbt turns on and by using higher gate voltages up to 15 volts The Collector emit voltage will always be lower at a given current flow which means less power losses just make sure not to exceed the maximum gate Aid of voltage now after removing the voltage source from the gate the igbt Apparently stays conductive the reason for that is its gate which basically behaves like a mosfet gate and thus can be modeled as a capacitor while we successfully charge it up through the gate voltage and thus turned the igbt on the charge will afterwards just sit there and let the LGBT stay conductive unless of course course we connected to ground so that the capacitor can discharge and the igbt can turn off to keep this process simple we can use a 10 kilohm pull down resistor between the gate and emitter to discharge the gate automatically and thus save us a bit of trouble but if you're working with for example a pwm signal above 20 khz using a dedicated driver I Seer like the tcer 4420 is recommended and yes even though it states mfet driver it can also be used for igbts since they are so similar when it comes to the input site now all the IC basically does is connecting the gate either to the supply voltage or ground to charge it up or discharge it this is important since we need a specific gate charge to turn the igbt on and thus we must consider that the charge Q equals current I multiplied by the time t with higher frequencies T becomes smaller but Q is still constant which means we have to increase the gate current and the driver I here with its 6 amp current capability can usually handle the shop but not only that driver ic's like the IR 2113 can also be used for bootstrap operation and thus can provide the mandatory higher gate voltage for highight switching igbts which not only require the gate threshold voltage to turn on but Additionally the load voltage and speaking of turn on/ turnoff times if we compare the delay and Rise SL full times of the igbt which is around 145 NS and 240 NS with the times of a generic M fats which is around 32 NS and 160 NS we can see that the M fets switches faster this fact is also confirmed by these data times in the data sheet of the transistors and in conclusion that means that igbts are utilized for applications beneath 200 khz and M fats for everything above now let's get back to the light bulb example and see how much power loss each transistor creates the mass fats with its Rain To Source voltage drop of 0.024 volts at a current flow of 1.7 amps only creates a power loss of 0.04 Watts while the agbt with its collector to a middle voltage drop of 0.79 volts at a current flow of 1.65 amps creates a power loss of 1.3 wats that is 32 times as much and the reason for that is that the MOs Fat's voltage drop Rises linear with the current flow which makes it behave like a constant resistance in its omic region the igb T however acts more like a BJT on the output and features a much higher voltage drop and thus resistance at a lower current flow but on the other hand the common igbt can handle more current than a mass fats and also reaches a current level in which it is more efficient combine that with the higher collector to emit a breakdown voltage in comparison to the mass fed Strain To Source breakdown voltage and you know that igbts are all in all practical to use is a medium fast high voltage High current switch so using them for solid state Tesla coil would definitely be possible and if you want to know more about the individual components of the igbt aka the BJT and the MOs fat then don't forget to have a look at the dedicated Basics videos as always don't forget to like share and subscribe stay creative and I will see you next time