Physics of Computer Chips - Computerphile

The Art of Manipulating Atoms: A Journey to Quantum Mindset

In recent years, scientists have been exploring new ways to work with atoms and manipulate their behavior. Instead of trying to work around these tiny building blocks, researchers are exploiting their unique properties to achieve breakthroughs in fields like computer science and materials science. One of the key areas where this approach is being applied is in the manipulation of silicon.

Silicon is a fascinating material that has many useful properties, but it can be tricky to work with. When heated up to high temperatures, silicon atoms will try to form bonds with each other, which makes them difficult to manipulate on an individual level. However, by using ultrahigh vacuum conditions and heating the material to around 1200°C, researchers can drive off the oxide that forms on its surface, leaving behind a clean surface that is perfect for studying individual atoms.

This process may seem straightforward, but it's actually quite complex. To get good images of individual atoms on silicon surfaces, researchers typically spend many hours taking high-resolution photographs. In addition to this, forming components and patterning wafers using photolithography or electron beam lithography has become the standard method in the semiconductor industry. However, both of these methods are running out of steam, and new approaches need to be developed to keep up with the demands of modern technology.

One way that researchers are trying to push the boundaries is by using a technique called Extreme Ultraviolet (EUV) lithography. This involves exposing wafers to light with a wavelength of around 13.5 nanometers, which is much shorter than the wavelength of visible light. By doing so, it's possible to achieve feature sizes as small as 10 atoms across, which is incredibly precise.

However, there are also challenges associated with EUV lithography. For example, using electrons instead of photons means that the process has to be serial rather than parallel, which makes it much slower and more labor-intensive. This limits its practicality for large-scale semiconductor manufacturing. As a result, researchers have been looking for alternative methods that can offer better resolution and definition while still being able to keep up with modern demands.

In recent years, researchers have made significant progress in developing new techniques for manipulating atoms at the nanoscale. One of the key tools used for this is a technique called scanning probe microscopy (SPM). In SPM, a sharp probe is brought close to a surface and scanned over its area, allowing researchers to see individual atoms and manipulate them with precision.

However, SPM has its own limitations. For example, it can be slow due to the serial nature of the process, which makes it difficult to work with large samples or complex systems. Researchers are now exploring new approaches that can offer faster and more efficient ways of working with individual atoms.

The Crystal Structure of Silicon

Silicon crystallizes in a form where each atom is connected to four others, forming tetrahedral structures. This unique crystal structure has many interesting properties, including its ability to conduct electricity and heat. When silicon is heated up to high temperatures, it can also undergo significant changes in its crystal structure.

In chemical terms, silicon has four valence electrons that need to be bonded to other atoms in order to achieve stability. However, this means that silicon tends to form complex bonds with other elements, which can make it tricky to work with. Despite these challenges, researchers continue to study and manipulate silicon at the nanoscale, which is crucial for advancing our understanding of materials science.

The Future of Nanotechnology

As researchers push the boundaries of what's possible in nanotechnology, they're also exploring new ways to manipulate atoms and build complex systems. One area that shows great promise is the use of Extreme Ultraviolet (EUV) lithography, which could enable feature sizes as small as 10 atoms across.

However, there are still many challenges associated with EUV lithography, including its slow serial nature and limited practicality for large-scale manufacturing. Researchers need to find new ways to overcome these limitations in order to push the boundaries of what's possible in nanotechnology.